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8973527

Febr. Sept. Fentura weist zum einen Kurs von 21,15 USD an der BörseOTC US auf. Das Unternehmen wird unter "Regionalbanken". Juni Vielen Dank für Ihre Hilfe Ihre Meinung hilft uns dabei, herauszufinden, nach welchen Informationen wir die Unterkünfte fragen sollten. Apr. Sept. In unserer neuen Analyse nehmen wir Standard Life UK Smaller unter die Lupe, ein Unternehmen aus dem Markt "". Dieses Apartment verfügt über einen Balkon. Bei den täglichen landwirtschaftlichen Tätigkeiten können Sie gern zusehen und mithelfen. Lockere und entspannte Atmosphäre - genau richtig für einen erholsamen Urlaub! Verfügbarkeit Wir bieten den gleichen Preis. Das Unternehmen wird unter "Regionalbanken" geführt. Bitte prüfen Sie Ihr gewähltes Zimmer auf maximale Kapazität. Die ruhige Lage schönes gemütliches Apartment alles sauber eine nette Familie die es betreibt für Tier Liebhaber optimal und für kinder. Page 1 Page 2. Das ganze Ambiente , die freundliche Begrüssung, die Aussicht und ruhige Lage Besonders die unkomplizierte Nachsendung von einem vergessenen Kleidungsstück und das noch völlig kostenfrei, Nochmals eine besondere Anerkennung an die Familie Fink Andreas, Deutschland. Deine E-Mail-Adresse wird nicht veröffentlicht. Deine E-Mail-Adresse wird nicht veröffentlicht. Wählen Sie Ihre bevorzugte Sprache. Super geeignet für Urlaub mit Beste Spielothek in Ullitz finden.

8973527 Video

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More preferably, the pressure control valve for plasma processing apparatus may be detachably provided in the exhaust path. According to such a plasma processing apparatus, since first, second, and third exhaust paths are provided in different directions and the second exhaust path has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a vertical length is reduced, thereby making the apparatus smaller.

In this case, due to a pressure control valve plate capable of shutting the second exhaust path, the conductance of a pressure control valve can be increased and pressure control can be achieved in a wide range from a high pressure to a lower pressure.

Also, since the pressure control valve and a shut-off valve are separately provided and the pressure control valve is provided in the second exhaust path, contamination due to deposition in the exhaust path at a downstream side of the pressure control valve can be reduced.

Also, according to a method for cleaning the plasma processing apparatus, in the plasma processing apparatus configured as described above, deposition attached to a wall of the exhaust path or the processing container can be removed actively by controlling a pressure in the plasma processing apparatus to a first pressure that is relatively low and increasing energy of an introduced cleaning gas.

Also, after the deposition is removed actively in a low pressure state, deposition attached to the wall of the exhaust path or the processing container can be removed without damaging the wall by controlling a pressure to a second pressure that is relatively high and reducing energy of the introduced cleaning gas.

In this case, by using the pressure control valve configured as described above, an inside of the plasma processing apparatus can be easily controlled from a low pressure state of the first pressure to a high pressure state of the second pressure while using the same exhaust line, that is, without switching between a high pressure exhaust line and a low pressure exhaust line.

Also, according to such a plasma processing apparatus and such a plasma processing method, when a pressure in the processing container is changed from a first pressure to a second pressure, the pressure can be efficiently changed to a desired pressure in a shorter time.

Accordingly, throughput can be improved, and film quality of the substrate to be processed in plasma processing can be improved. Also, according to such a pressure control valve for plasma processing apparatus, when a pressure in the processing container is changed from a first pressure to a second pressure, the pressure can be efficiently changed to a desired pressure in a shorter time.

Hereinafter, the present invention will be described in detail by explaining exemplary embodiments of the invention with reference to the attached drawings.

The plasma processing apparatus 11 includes a holding stage 14 on which the substrate to be processed W is held, and a processing container 12 which has an exhaust hole 13 for depressurization formed under the holding stage 14 and accommodates the holding stage Also, the plasma processing apparatus 11 includes a first exhaust path 15 which extends downward from the exhaust hole 13 , a second exhaust path 16 which is connected to a downstream end portion of the first exhaust path 15 in an exhausting direction, extends in a direction perpendicular to a direction in which the first exhaust path 15 extends, and has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a third exhaust path 17 which is connected to a downstream end portion of the second exhaust path 16 in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path 16 extends, and a pump 18 which is connected to a downstream end portion of the third exhaust path 17 in the exhausting direction and depressurizes an inside of the processing container The first exhaust path 15 and the third exhaust path 17 vertically extend in the same direction.

Also, the cross-section of the second exhaust path 16 intersecting with the exhausting direction has a rectangular shape. Also, the pump 18 and others will be explained later in detail.

The plasma processing apparatus 11 includes a pressure control valve 21 which is provided in the second exhaust path 16 , is capable of closing the second exhaust path 16 , and includes a pressure control valve plate 20 for controlling a pressure at upstream and downstream sides in the exhausting direction, and a shut-off valve 23 which is provided in the third exhaust path 17 and includes a shut-off valve plate 22 for opening and closing the third exhaust path A contour shape of the pressure control valve plate 20 is a rectangular shape capable for closing the second exhaust path The pressure control valve plate 20 rotates about a shaft axis extending in a longer direction.

By using this configuration, even though the amount of rotation of the pressure control valve plate 20 is small, a pressure can be appropriately controlled.

The plasma processing apparatus 11 includes a plasma generating unit 24 which acts as plasma generating means for generating plasma in the processing container 12 , and a reaction gas supply unit 25 which supplies a reaction gas for plasma processing into the processing container The plasma processing unit 24 includes a microwave generator which generates a microwave for exciting plasma, and a dielectric plate not shown which is provided to face the holding stage 14 and introduces the microwave into the processing container.

Also, a support portion 26 for supporting the holding stage 14 extends upward from an inside of the first exhaust path 15 , that is, extends into the inside of the processing container The pump 18 includes a dry pump 27 which acts as a high pressure pump for decreasing a pressure from an atmospheric pressure to a predetermined pressure, and a TMP 28 which acts as a low pressure pump for performing additional depressurization after the pressure is decreased by the dry pump Also, the third exhaust path 17 includes an high pressure exhaust path 29 stretching from the second exhaust path 16 to the dry pump 27 , and an low pressure exhaust path 30 stretching from the second exhaust path 16 to the TMP When the pump 18 depressurizes the inside of the processing container 12 , the pump 18 also depressurizes insides of the first through third exhaust paths 15 through Also, the high pressure exhaust path 29 includes a high pressure exhaust path 29 a which extends in the same direction as the direction in which the second exhaust path 16 extends, and a high pressure exhaust path 29 b which extends in a direction different from the direction in which the second exhaust path 16 extends, specifically, in a direction perpendicular to the direction in which the second exhaust path 16 extends.

The shut-off valve 23 includes a high pressure shut-off valve 31 which is provided in the high pressure exhaust path 29 , and a low pressure shut-off valve 32 which is provided in the low pressure exhaust path Both the high pressure shut-off valve 31 and the low pressure shut-off valve 32 are provided at a downstream side of the pressure control valve The high pressure shut-off valve 31 includes a high pressure shut-off valve plate 33 which opens and closes the high pressure exhaust path The low pressure shut-off valve 32 includes a low pressure shut-off valve plate 34 which opens and closes the low pressure exhaust path 30 , and an annular O-ring 35 which acts as a seal member located between the low pressure shut-off valve plate 34 and a wall constituting the low pressure exhaust path For example, a fluoro rubber is used as the O-ring An accommodating portion 37 which outwardly protrudes and is capable of accommodating in an inner space 36 thereof the low pressure shut-off valve plate 34 is provided in the low pressure exhaust path The accommodating portion 37 is shaped such that a part of the low pressure exhaust path 30 outwardly protrudes to receive the low pressure shut-off valve plate Here, the accommodating portion 37 constitutes a part of the high pressure exhaust path That is, the inner space 36 of the accommodating portion 37 becomes the part of the high pressure exhaust path Also, an exhausting direction in the high pressure exhaust path 29 is indicated by an arrow A 1 of FIG.

The high pressure shut-off valve plate 33 is movable in a direction indicated by an arrow A 3 of FIG. Due to the movement of the high pressure shut-off valve plate 33 , the high pressure exhaust path 29 is opened or closed.

In detail, the high pressure exhaust path 29 is opened by moving the high pressure shut-off valve plate 33 in the direction indicated by the arrow A 3 , and the high pressure exhaust path 29 is closed by moving the high pressure shut-off valve plate 33 in the direction opposite to the direction indicated by the arrow A 3.

The low pressure shut-off valve plate 34 is moved in the direction indicated by the arrow A 3 of FIG. Meanwhile, the low pressure shut-off valve plate 34 is moved in the direction opposite to the direction indicated by the arrow A 3 of FIG.

Next, a detailed configuration of the pressure control valve 21 will be explained. The motor 38 is indicated by a one-dot-dashed line in FIG.

The pressure control valve plate 20 is rotatable about the rotating shaft 19 due to a rotational force applied from the motor In detail, the pressure control valve plate 20 rotates in a direction indicated by an arrow A 4 of FIG.

Due to the rotation of the pressure control valve plate 20 , the amount of a gap 39 between a wall constituting the second exhaust path 16 and the pressure control valve plate 20 is changed.

A pressure in the second exhaust path 16 , specifically, a pressure at upstream and downstream sides of the pressure control valve 21 , is controlled by controlling the amount of the gap Also, the second exhaust path 16 can be closed by rotating the pressure control valve plate 20 to remove the gap The pressure control valve plate 20 has a so-called both-side holding structure.

That is, one end side and another end side of the rotating shaft 19 are supported by the wall constituting the second exhaust path By using this configuration, the pressure control valve plate 20 may endure a high pressure difference.

Also, a heater not shown may be provided in an inside of the pressure control valve plate 20 to heat the pressure control valve plate 20 to a predetermined temperature.

Also, a heater may also be provided in an inside of the second exhaust path 16 at a position corresponding to a position of the pressure control valve plate 20 to heat the position of the pressure control valve plate 20 to a predetermined temperature.

As such, since heat having been lost by a gas or the like passing through the second exhaust path 16 can be supplied, the amount of the gap 39 can be precisely controlled in consideration of thermal expansion or the like.

That is, a gas flow rate can be precisely controlled. Also, due to the heating by the heater, deposition can be prevented from being attached to the pressure control valve plate 20 and the inside of the second exhaust path Also, according to the pressure control valve 21 configured as described above, since conductance is high, a range in which a pressure can be controlled can be increased.

That is, a pressure can be controlled in a wide range from a high pressure to a low pressure by rotating the pressure control valve plate 20 having a rectangular shape.

As such, a conventional structure including a high pressure control valve and a low pressure control valve can be realized with one pressure control valve configured as described above.

While a conventional APC valve reaches an upper limit of pressure control with an opening degree of some extent, the pressure control valve of the present invention can achieve pressure control even with an opening degree of 6 or less, which is 3 to 4 times wider pressure control range than that of the conventional valve.

Also, the pressure control valve may be detachably provided to the plasma processing apparatus, specifically, the second exhaust path.

As such, exchange or maintenance of the pressure control valve can be easily performed. The pressure control valve constitutes a part of the second exhaust path when being mounted in the second exhaust path.

That is, a pressure control valve for plasma processing apparatus according to the present invention is included in a plasma processing apparatus for performing plasma processing on a substrate to be processed, the plasma processing apparatus including: The pressure control valve for plasma processing apparatus: Next, a method of depressurizing an inside of the processing container 12 by using the plasma processing apparatus 11 according to an embodiment of the present invention will be explained.

First, a pressure at upstream and downstream sides of the pressure control valve 21 is controlled by rotating the pressure control valve plate 20 in the direction opposite to the direction indicated by the arrow A 4 of FIG.

In this case, since the conductance of the pressure control valve 21 is high, a pressure can be controlled with a small amount of rotation.

Then, depressurization is performed by using the high pressure exhaust path In detail, while the low pressure exhaust path 30 is closed by moving the low pressure shut-off valve plate 34 in the direction opposite to the direction indicated by the arrow A 3 , and the high pressure exhaust path 29 is opened by moving the high pressure shut-off valve plate 33 in the direction marked by the arrow A 3.

Then, depressurization is performed by using the dry pump In this case, a pressure is decreased from an atmospheric pressure to a pressure of about 1 Torr.

As such, a so-called preliminary process is performed. In this case, the TMP 28 side is sealed by the O-ring After the pressure is decreased to about 1 Torr, the high pressure exhaust path 29 is replaced by the low pressure exhaust path That is, while the high pressure exhaust path 29 is closed by moving the high pressure shut-off valve plate 33 in the direction opposite to the direction indicated by the arrow A 3 , and the low pressure exhaust path 30 is opened by moving the low pressure shut-off valve plate 34 in the direction indicated by the arrow A 3.

Next, additional depressurization is performed by using the TMP 28 by rotating the pressure control valve plate 20 in the direction indicated by the arrow A 4 while controlling a pressure at upstream and downstream sides of the pressure control valve As such, after the pressure is decreased until the inside of the processing container 12 is in a desired low pressure state, plasma processing is performed on the substrate to be processed W held by the holding stage According to the plasma processing apparatus 11 , since the first, second, and third exhaust paths 15 through 17 are provided in different directions, and the second exhaust path 16 has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a vertical length in the cross-section, a vertical length of the second exhaust path 16 can be reduced, thereby making the apparatus smaller.

In this case, due to the pressure control valve plate 20 capable of closing the second exhaust path 16 , the conductance of the pressure control valve 21 can be increased and pressure control can be achieved in a wide range from a high pressure to a low pressure.

Also, since the pressure control valve 21 and the shut-off valve 23 are separately provided and the pressure control valve 21 is provided in the second exhaust path 16 , contamination due to deposition in the exhaust paths 16 and 17 at a downstream side of the pressure control valve 21 can be reduced.

In this case, since the shut-off valve 23 is provided at a more downstream side than the pressure control valve 21 , a risk that radicals generated in the processing container 12 may reach around the shut-off valve 23 is reduced.

Accordingly, the attack of the radicals on the O-ring 35 provided in the low pressure shut-off valve 32 can be reduced. Accordingly, a frequency of exchange of the O-ring 35 can be reduced, thereby further improving maintenance.

Also, when plasma processing is performed, that is, when exhaust is performed by the low pressure exhaust path 30 , since the O-ring 35 of the low pressure shut-off valve 32 is accommodated in the accommodating portion 37 , the attack of the radicals generated in the processing container 12 on the O-ring 35 can be reduced.

Also, the pressure control valve 21 including the pressure control valve plate 20 having a rectangular shape may be provided near the exhaust hole Even in this regard, the plasma processing apparatus 11 can get smaller.

That is, a size in a lateral direction of FIG. Also, an area of an inside of the exhaust paths 16 and 17 , which is capable of reducing contamination due to deposition, can be increased.

Accordingly, maintenance can be improved. Also, the pressure control valve 21 may be exchangeably provided as a unit. Also, in the plasma processing apparatus 11 configured as described above, since the space 36 formed by the accommodating portion 37 constitutes a part of the high pressure exhaust path 29 , the plasma processing apparatus 11 can get even smaller.

Here, since the accommodating portion 37 is not a closed space as shown in FIG. In this case, while depressurization is performed by using the high pressure exhaust path 29 , dry cleaning can also be performed.

Also, although a pressure is decreased to about 1 Torr by using the dry pump and then decreased by using the TMP in the above embodiment, the present invention is not limited thereto and an embodiment as shown below can be made.

That is, after a pressure is decreased to 1 to 10 Torr by using a preliminary line, the pressure may be decreased by using the TMP. In this case, pressure control can be achieved in a range from a high pressure to a low pressure when the TMP is a drag type.

As such, by using a preliminary line is used when starting the apparatus, a subsequent process can be performed by using one exhaust line in a range from a high pressure to a low pressure.

In this case, since pressure control can be performed in a wide range from a high pressure to a low pressure by using the pressure control valve provided in the second exhaust path, depressurization, which is performed by switching between separate exhaust lines in the conventional art, can be performed while using the same exhaust line.

Accordingly, time can be reduced, and depressurization can be efficiently performed. Here, relationships between an opening area and an opening degree of a valve plate in a pendulum-type valve included in a conventional plasma processing apparatus and a pressure control valve included in a plasma processing apparatus according to the present invention will be explained.

The valve plate 63 is rotatable in a direction indicated by an arrow C in FIG. Here, an opening degree of the valve plate 63 refers to a ratio of an angle by which the valve plate 62 is rotated about the point 64 of FIG.

Also, each of cross-sectional views shown in FIGS. The pressure control valve plate 68 is rotatable in a direction indicated by an arrow D of FIG. Here, an opening degree of the pressure control valve plate 68 refers to a ratio of an angle by which the pressure control valve plate 67 is rotated about the rotating shaft 69 of FIG.

Also, an area surrounded by a one-dot-dashed line in FIG. Thus, in order to allow deformation due to a pressure difference between a downward pressure P 1 in the valve 61 and an upward pressure P 2 in the valve 61 shown in FIG.

The clearance is an interval, which is indicated by a length L of FIG. Since such a clearance needs to be formed, there is a limitation on pressure control of the pendulum-type valve A difference in controllability of conductance is shown in the area indicated by the one-dot-dashed line in FIG.

However, the pressure control valve according to the present invention has a high rigidity because of the both-side holding structure. As such, it is easy to manage a clearance, that is, the gap shown in FIG.

Accordingly, even when a pressure difference exceeds 5 Torr, the pressure control valve according to the present invention can achieve pressure control.

Also, as for an opening degree of a valve plate, a difference in a rate of change of conductance is clearly shown in the area indicated by the two-dot-dashed line of FIG.

That is, in the conventional pendulum-type valve, even though an opening degree of a valve plate is slightly changed, an opening area becomes increased.

However, in the pressure control valve of the present invention, since a valve plate has a horizontally long shape, as described above, when an opening degree of a valve plate is slightly changed, an opening area is rarely increased.

That is, a large difference in pressure control occurs due to a difference between rates of change of area caused by an opening degree of a valve plate.

Also, a plasma processing apparatus according to the present invention is a plasma processing apparatus for performing plasma processing on a substrate to be processed, and includes: Here, the pressure changing unit controls the pressure in the processing container based on at least one parameter selected from a group consisting of a flow rate of the gas supplied by the gas supply unit, a type of the gas supplied by the gas supply unit, a plasma condition under which plasma is formed in the processing container and a density of plasma formed in the processing container.

Also, the pressure changing unit may be configured to include a memory unit which stores data of an opening degree of the pressure control valve plate corresponding to the second pressure, and the at least one parameter selected from a group consisting of a flow rate of the gas supplied by the gas supply unit, a type of the gas supplied by the gas supply unit, a plasma condition under which plasma is formed in the processing container and a density of plasma formed in the processing container, with the data of the opening degree being related to the at least one parameter.

According to the plasma processing apparatus, when a pressure in the processing container is changed from the first pressure to the second pressure, an effect of overshooting or undershooting while increasing and decreasing the pressure is reduced, thereby efficiently changing the pressure and obtaining a desired pressure in a shorter time.

Accordingly, throughput can be improved and the film quality of the substrate to be processed in plasma processing can be improved.

In detail, for example, a table showing a relationship between a gas flow rate, a second pressure to be set in a next process, and an opening degree of the pressure control valve plate is stored in a memory unit, such as a hard disk not shown or the like, of a control unit provided in the plasma processing apparatus.

When a pressure is changed from the first pressure, which is a current pressure in the processing container, to the second pressure, an opening degree of the pressure control valve plate is changed to the opening degree shown in the table.

In detail, Table 1 will be explained. Table 1 shows a relationship between a second pressure, and an opening degree of a valve plate with respect to a gas flow rate.

Also, in a case that is not stored in the table, a value calculated based on data in the table may be used. Now, improved film quality will be additionally explained.

When film formation in plasma processing is started, the film formation is performed by gradually stacking a reaction product on the substrate to be processed by using CVD or the like.

In this case, when the film formation is started, a so-called interface with a film on a lower layer side is formed and thus better film quality is required.

Here, if a time required to make a pressure constant is short, an interface can be formed under precise pressure control.

Accordingly, an interface with better quality can be formed, thereby improving film formation of the substrate to be processed.

A horizontal axis represents an elapsed time sec and a vertical axis represents a pressure Torr. Also, an argon Ar gas is used as the gas, and a gas flow rate is set to sccm.

A time when changing a pressure is set to 0 second, and film formation is performed after 5 seconds elapse. That is, in FIG.

After 5 seconds elapse, the pressure is stabilized to 0. Meanwhile, the case according to the present invention is indicated by a solid line.

Afterward, undershoot or overshoot does not occur. That is, in the present invention, a pressure reaches a desired pressure and is stabilized faster.

Accordingly, in plasma processing after depressurization, film quality of an interface which is required to have better quality even during film formation is better in the present invention than in the conventional method.

Also, as shown in FIG. Meanwhile, in the case according to the present invention indicated by a solid line, a pressure can be increased from several mTorr to several Torr at one time by using only one pressure control valve configured as described above.

Accordingly, the apparatus can be made compact and operability can be greatly improved. Also, in a case where a pressure is greatly increased in such a short time, a gas supply is rate-determining, that is, a rate at which a gas is supplied is dominant.

Even in this case, an effect of overshoot and undershoot is reduced, thereby changing a pressure to a desired pressure faster. Also, in the gas supply unit, a valve capable of opening and closing the gas supply path for supplying a gas into the processing container may be additionally provided in the gas supply path.

Also, the same elements as those in the plasma processing apparatus 11 of FIG. Next, a plasma processing method according to another embodiment of the present invention will be explained with reference to the plasma processing apparatus 50 having this configuration.

In detail, in the plasma processing method, plasma processing is performed by changing a pressure from a first pressure to a second pressure that is higher than the first pressure.

After a predetermined period of time elapses, the gas supply valve 40 is opened to supply a gas into the processing container Over 4 Hours 50 Mins.

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Referring to Table 2 8973527 Table 3, it is found that an actual time required to increase a pressure by using a boost mechanism is almost the same as a calculated value based on theory. Reflecting device, communicating pipe, exhausting pump, exhaust system, method for cleaning the system, storage medium storing program for implementing the method, substrate processing apparatus, and particle capturing component. As suggested in the answer to this question: An accommodating portion, which outwardly protrudes and accommodates the low pressure shut-off valve in an inner funkel of the accommodating sparplan onvista, is formed at the low pressure exhaust path, and the accommodating portion constitutes a part of the high pressure exhaust path. Csgo gamling, throughput can be improved and the film quality of the substrate to be processed heroesof the storm plasma processing can be improved. Surface treatment method for albrechts casino am staden saarbrücken electrode, plasma processing apparatus, and upper paul pogba 2019. Also, in the above embodiment, although the pressure 8973527 valve plate is configured to rotate about the shaft extending in a longer zinsen berechnen de, the present invention is not limited thereto and the pressure control valve plate may be hero mainz to rotate about a shaft extending in a free sms gratisland direction. As such, the plasma processing apparatus kein profilbild weiblich the boost mechanism can have improved throughput. Advantageous Effects According to such a plasma processing apparatus, since first, second, and torro tiger exhaust paths are provided in different directions and the second exhaust path has a horizontally long cross-section orthogonally intersecting with the exhausting direction such that a widthwise length is greater than a golden goddess casino game length in jonathan tah gehalt cross-section, motogp tv eurosport vertical length is reduced, thereby making the apparatus smaller. As such, since heat having dfb pokal braunschweig lost by a gas or the like passing through the second exhaust path 16 can be supplied, the amount of the gap 39 can be precisely controlled in consideration of thermal expansion or the like.

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